Optimizing β-Ga₂O₃ nanorod morphology by  controlling hydrothermal reaction time for uvc photodetection

Duong Minh Dat1, Mai Dinh My Duyen1, Nguyen Tien Luat2, Hoang-Nguyen Quynh-Anh1, Do Huy Binh1,  
1 Ho Chi Minh City University of Technology and Engineering, Vietnam
2 Faculty of Materials Science and Technology, University of Science, Ho Chi Minh City, Viet Nam

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Tóm tắt

Các thanh nano β-Ga₂O₃ được tổng hợp bằng phương pháp thủy nhiệt, sau đó được ủ nhiệt trong không khí ở 910 °C. Kết quả cho thấy thời gian phản ứng ảnh hưởng mạnh đến hình dạng của các thanh nano. Khi thời gian thủy nhiệt tăng lên, chiều dài các thanh nano tăng nhưng đồng thời hiện tượng kết tụ cũng bắt đầu xuất hiện. Thời gian tối ưu để đạt được sự cân bằng giữa việc làm tăng chiều dài các thanh nano đồng thời hạn chế việc chúng bị kết tụ lại là 7,5 giờ. Sau quá trình nung ở 910 °C, GaOOH đã chuyển hoàn toàn sang β-Ga₂O₃ có cấu trúc đơn tà. Kết quả đo FTIR cũng xác nhận sự hình thành liên kết Ga–O và sự suy giảm của các nhóm hydroxyl tương ứng với sự thay đổi của thời gian thủy nhiệt. Vật liệu β-Ga₂O₃ sau đó được sử dụng để chế tạo cảm biến GO/β-Ga₂O₃. Kết quả đo dòng điện – thời gian cho thấy linh kiện đóng ngắt ổn định khi được kích thích bởi tia UVC 254 nm, với độ nhạy 2,06×10⁻² A W⁻¹ và thời gian đáp ứng 1,6/2,7 s tại điện áp 10 V. Những kết quả này cho thấy tiềm năng ứng dụng của các thanh nano β-Ga₂O₃ trong cảm biến tia UVC.

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